收藏本站
IRFH5406PbF
HEXFET ? Power MOSFET
V DS
R DS(on) max
(@V GS = 10V)
Q g (typical)
R G (typical)
60
14.4
21
1.1
V
m Ω
nC
Ω
I D
(@T c(Bottom) = 25°C)
40
A
PQFN 5X6 mm
Applications
?
?
?
?
Secondary Side Synchronous Rectification
Inverters for DC Motors
DC-DC Brick Applications
Boost Converters
Features and Benefits
Features
Low RDSon (< 14.4 m Ω )
Low Thermal Resistance to PCB (< 2.7°C/W)
100% Rg tested
Benefits
Lower Conduction Losses
Enables better thermal dissipation
Increased Reliability
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
results in
?
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
Package Type
Standard Pack
Form Quantity
Note
IRFH5406TRPbF
PQFN 5mm x 6mm
Tape and Reel
4000
IRFH5406TR2PBF
PQFN 5mm x 6mm
Tape and Ree l
400
EOL notice # 259
Absolute Maximum Ratings
Parameter
Max.
Units
V DS
V GS
I D @ T A = 25°C
I D @ T A = 70°C
I D @ T C(Bottom) = 25°C
I D @ T C(Bottom) = 100°C
I DM
P D @T A = 25°C
P D @ T C(Bottom) = 25°C
T J
T STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V GS @ 10V
Continuous Drain Current, V GS @ 10V
Continuous Drain Current, V GS @ 10V
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
60
± 20
11
9
40
25
160
3.6
46
0.029
-55 to + 150
V
A
W
W/°C
°C
Notes ? through ? are on page 8
1
www.irf.com ? 2013 International Rectifier
Submit Datasheet Feedback
December 16, 2013
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
IRFH7921TRPBF MOSFET N-CH 30V 15A PQFN56
IRFH7923TRPBF MOSFET N-CH 30V 15A PQFN56
IRFHS9301TR2PBF MOSFET P-CH 30V 6A PQFN
IRFI1310N MOSFET N-CH 100V 24A TO220FP
IRFI520N MOSFET N-CH 100V 7.6A TO220FP
IRFI530N MOSFET N-CH 100V 12A TO220FP
IRFIZ24E MOSFET N-CH 60V 14A TO220FP
IRFIZ34E MOSFET N-CH 60V 21A TO220FP
相关代理商/技术参数
IRFH6200PBF 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFETPower MOSFET
IRFH6200TR2PBF 功能描述:MOSFET MOSFT 20V 100A 1.2mOhm 2.5V cpbl RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRFH6200TR2PBF 制造商:International Rectifier 功能描述:N-CHANNEL MOSFET 20V 100A PQFN-8
IRFH6200TRPBF 功能描述:MOSFET 20V SINGLE N-CH 1.2mOhms 155nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRFH7004TR2PBF 功能描述:MOSFET N CH 40V 100A PQFN5X6 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:StrongIRFET™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
IRFH7004TRPBF 功能描述:MOSFET 40V 100A 1.4mOhm HEXFET 156W 134nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRFH7084TRPBF 制造商:International Rectifier 功能描述:MOSFET, 40V, 100A, 1.25 MOHM, 129 NC QG, PQFN56 - Tape and Reel 制造商:International Rectifier 功能描述:MOSFET N-CH 40V 100A PQFN
IRFH7107TR2PBF 功能描述:MOSFET 75V 75A 8.5mOhm 48nC Qg RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube